2sk2334(l), 2sk2334(s) silicon n-channel mos fet november 1996 application high speed power switching features low on-resistance high speed switching low drive current 4 v gate drive device can be driven from 5 v source suitable for switching regulator, dc-dc converter avalanche ratings outline 1 2 3 1 2 3 4 4
dpak-2 1. gate
2. drain
3. source
4. drain d g s
2sk2334(l), 2sk2334(s) 2 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v drain current i d 20 a drain peak current i d(pulse) * 1 80 a body to drain diode reverse drain current i dr 20 a avalanche current i ap * 3 20 a avalanche energy e ar * 3 34 mj channel dissipation pch* 2 30 w channel temperature tch 150 c storage temperature tstg C55 to +150 c notes 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c 3. value at tch = 25 c, rg 3 50 w
2sk2334(l), 2sk2334(s) 3 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 60 v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 v i g = 100 m a, v ds = 0 gate to source leak current i gss 10 m av gs = 16 v, v ds = 0 zero gate voltage drain current i dss 100 m av ds = 50 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 2.25 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) 0.04 0.055 w i d = 10 a v gs = 10 v* 1 0.055 0.07 w i d = 10 a v gs = 4 v* 1 forward transfer admittance |y fs |915si d = 10 a v ds = 10 v* 1 input capacitance ciss 980 pf v ds = 10 v v gs = 0 f = 1 mhz output capacitance coss 440 pf reverse transfer capacitance crss 135 pf turn-on delay time t d(on) 14nsi d = 10 a v gs = 10 v r l = 3 w rise time t r 90ns turn-off delay time t d(off) 180 ns fall time t f 125 ns body to drain diode forward voltage v df 1.0 v i f = 20 a, v gs = 0 body to drain diode reverse recovery time t rr 90 m si f = 20 a, v gs = 0, dif / dt = 50 a / m s note 1. pulse test
2sk2334(l), 2sk2334(s) 4 40
30
20
10 0 channel dissipation pch (w) 50 100 150 200 case temperature tc (?) power vs. temperature derating drain to source voltage v (v) ds drain current i (a) d maximum safe operation area 200 100 20 50 10 2 5 1 0.2 0.5 1 2 5 10 20 50 100 1 ms pw = 10 ms (1shot) dc operation (tc = 25?) 100 ? 10 ? operation in
this area is
limited by r ds(on) ta = 25 ? 50
40
30
20
10 0 drain to source voltage v (v) ds drain current i (a) d pulse test 3.5 v 4 v typical output characteristics 5 v 10 v 3 v 246810 6 v 4.5 v 2.5 v v = 2 v gs 20
16
12
8
4 0 gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics 1234 5 v = 10 v
pulse test ds tc = 75? 25? ?5?
2sk2334(l), 2sk2334(s) 5 1.0
0.8
0.6
0.4
0.2 0 gate to source voltage v (v) gs drain to source voltage v (v) ds(on) drain to source saturation voltage vs.
gate to source voltage 246810 pulse test i = 15 a d 10 a 5 a drain current i (a) d drain to source on state resistance r ( ) w ds(on) static drain to source on state resistance
vs. drain current 1 2 5 10 20 50 100 1 0.2 0.5 0.1 0.02 0.01 0.05 pulse test v = 4 v gs 10 v 0.1
0.08
0.06
0.04
0.02 ?0 0 40 80 120 160 case temperature tc (?) 0 r ( ) ds(on) static drain to source on state resistance w pulse test static drain to source on state resistance
vs. temperature i = 10 a d v = 4 v gs 10 v 2 a, 5 a, 10 a 2 a, 5 a forward transfer admittance |yfs| (s) drain current i (a) d forward transfer admittance vs.
drain current 50 20 10 2 5 1 0.5 0.1 0.3 1 3 10 30 100 25 ? tc = ?5 ? 75 ? ds v = 10 v
pulse test
2sk2334(l), 2sk2334(s) 6 reverse drain current i (a) dr reverse recovery time trr (ns) body to drain diode reverse recovery time 1000 200 500 100 20 50 10 0.1 0.3 1 3 10 30 100 di/dt = 50 a/ s v = 0, ta = 25 c gs 01020304050 capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs.
drain to source voltage 10000 3000 1000 300 100 30 10 v = 0
f = 1 mhz gs ciss coss crss 100
80
60
40
20 0 gate charge qg (nc) drain to source voltage v (v) ds 20
16
12
8
4 0 gate to source voltage v (v) gs dynamic input characteristics v = 10 v
25 v
50 v dd v gs ds v i = 20 a d v = 50 v
25 v
10 v dd 20 40 60 80 100 drain current i (a) d switching time t (ns) switching characteristics 1000 200 500 100 20 10 50 0.3 1 3 10 30 v = 10 v, v = 30 v
pw = 5 ?, duty < 1 % gs dd t f r t d(on) t d(off) t
2sk2334(l), 2sk2334(s) 7 20
16
12
8
4 0 0.4 0.8 1.2 1.6 2.0 source to drain voltage v (v) sd reverse drain current i (a) dr reverse drain current vs.
souece to drain voltage pulse test v = 0, ? v gs 10 v 5 v 40
32
24
16
8 channel temperature tch (?) repetive avalanche energy e (mj) ar maximun avalanche energy vs.
channel temperature derating 25 50 75 100 125 150 0 i = 20 a
v = 25 v
duty < 0.1 %
rg > 50 ap dd w d. u. t rg i
monitor ap v
monitor ds v dd 50 w vin
15 v 0 i d v ds i ap v (br)dss l v dd e = ?l ?i 2 1 v v ?v ar ap dss dss dd 2 avalanche test circuit and waveform
2sk2334(l), 2sk2334(s) 8 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m pulse width pw (s) normalized transient thermal impedance 100 m 1 10 s (t) g dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c
ch ?c = 4.17 ?/w, tc = 25 ? q g q
q d = 1 0.5 0.2 0.01 0.02 0.1 0.05 1 shot pulse tc = 25? normalized transient thermal impedance vs. pulse width vin monitor d.u.t. vin
10 v r l v
= 30 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout
monitor 50 w 90% 10% t f switching time test circuit waveform
2sk2334(l), 2sk2334(s) 9 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd.
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